面向大规模的光子芯片使用低异性薄膜-酸的低异性薄膜
Fei Huang1, Xiaowan Shen1, Siyuan Wang1
1College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310058, China.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 10, 2025
概括
低折射率-酸在绝缘体上的光子集成电路 (LTOI) 克服了-酸在绝缘体上的 (LNOI) 平台中的极化问题. 这使得高性能光子芯片能够实现超快,大容量的数据处理和通信.
科学领域:
- 光子学和光学工程 光子学和光学工程
- 材料科学 材料科学 材料科学
- 集成电路设计 集成电路设计
背景情况:
- 对高速,低功耗数据处理的需求需要先进的光子解决方案.
- -酸在绝缘体 (LNOI) 平台提供高性能电光 (EO) 调制器,但由于高双折射率而遭受偏振模式转换.
- 这种双折阻碍了光子设备的大规模集成.
研究的目的:
- 提出并演示使用-酸在绝缘体上 (LTOI) 的低折射率光子集成电路 (PIC) 平台.
- 为了实现大规模光子芯片的高性能被动和活性光子设备.
- 为解决先进光子应用现有LNOI平台的局限性.
主要方法:
- 理论分析低和高折射率波导的模式转换和演变.
- 为LTOI PICs开发一种简单且通用的制造工艺.
- 展示各种被动光子设备和波长分割多重复合 (WDM) 光学发射器.
主要成果:
- 在低双折率LTOI平台上,不需要的模式混合化被有效地抑制.
- 代表性的被动光子设备表现出令人印象深刻的性能指标.
- 一个WDM光学发射器通过集成8个EO调制器和一个8通道阵列波导网格,实现了1.6 Tbps的数据速率.
结论:
- 低双断率的LTOI平台显示了大规模光子集成的巨大潜力.
- 这个平台为被动和主动设备提供了对光子行为的强有力的控制.
- 它是用于超快速处理和传输大容量数据的有希望的解决方案.
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