相关实验视频

Updated: Jun 3, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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评估ZnTe和CdSe作为INA/Al接口的潜在道障碍物的第一原则

Malcolm J A Jardine1, Derek Dardzinski1, Zefeng Cai1

  • 1Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.

ACS applied materials & interfaces
|January 13, 2025
PubMed
概括

研究人员探索了InAs/Al接口的ZnTe和CdSe道障碍,以实现拓量子位的Majorana零模式. 由于其电子阻断带对齐,ZnTe被证明是优越的,这表明6-18个原子层的实验性使用.

关键词:
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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