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陶,半导体和金属片的烧结增强的牺牲层:一种通用战略

Xiangyu Chen¹, Jianqin Zhu¹, Zhi Tao¹

¹School of Energy and Power Engineering, Beihang University, Beijing, 100191, China.

Small (Weinheim an der Bergstrasse, Germany)

|January 13, 2025

概括

一种新的氧化 (ITO) 牺牲层增强了对各种材料的选择性激光烧结. 这种方法提高了陶粒粗化,金属氧化控制和半导体性能,使高质量的薄膜设备制造成为可能.

科学领域:

材料科学材料科学材料科学
添加剂制造添加剂制造添加剂制造
纳米技术纳米技术

背景情况:

选择性激光烧结 (SLS) 是一种快速发展的薄膜数字制造技术.
在SLS的挑战包括烧结陶 (低吸收),金属 (氧化) 和半导体 (高应力).

研究的目的:

引入一种使用氧化 (ITO) 牺牲层的新方法,以克服各种材料的SLS限制.
为了证明ITO层在促进高质量的激光烧结方面的有效性.

主要方法:

在选择性激光烧结过程中使用ITO牺牲层.
利用ITO层的特性作为激光吸收器,氧气屏障和温度均剂.

主要成果:

ITO层有效地提高了烧结温度,促进了陶粒的粗化.
它防止了金属的氧化,保持氧化水平低于25%.
它通过延迟裂变和增加Seebeck因子1.4倍来提高半导体性能.

结论:

ITO牺牲层为激光烧结各种材料提供了一种材料友好和纯度中立的策略.
这种方法支持使用SLS制造高性能薄膜设备.

关键词:

印度锡氧化物锡氧化物激光烧结是一种激光烧结.性能优化优化性能优化祭祀层是一种牺牲层.

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