PdAs2,

Juan Cui1,2, Huan Zheng1, Miao Zheng1

  • 1Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China. yang_yu@iapcm.ac.cn.

概括

应变工程显著提高了PdAs2单层中载体的移动性. 拉伸应变增强了电子流动性超过670cm2V-1s-1,超过了常见的二维半导体.