通过合金二维VSi2N4来实现一个理想的半金属,用于自旋电子应用
Jin-Lan Sun1, Wei-Kang Zhang1, Mi-Mi Dong1
1Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China. ckwang@sdnu.edu.cn.
Physical chemistry chemical physics : PCCP
|January 14, 2025
概括
将VSi2N4与Sc或Y等过渡金属合金,可以为自旋电子器件制造理想的半金属. 这些合材料具有高磁阻力和高效的自旋过,为先进的自旋电子应用铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学计算化学
背景情况:
- 瓦纳二氧化化 (VSi2N4) 是一种具有高基里温度的二维材料.
- 在VSi2N4中达到理想的半金属性质是旋转子应用的理想条件.
研究的目的:
- 调查过渡金属兴奋剂对VSi2N4.4电子特性的影响.
- 探索合VSi2N4在旋转电子应用中的潜力.
主要方法:
- 使用了第一原则计算.
- 在VSi2N4单层的V位点模拟了过渡金属原子 (Sc-Ni,Y-Mo) 的替代兴奋剂.
- 评估了多系统的动态和热稳定性.
主要成果:
- 过渡金属的兴奋剂 (除了Ni) 通常会产生稳定的VSi2N4系统.
- 通过sc/y的兴奋剂,VSi2N4被转化为一种理想的半金属.
- Ti/Zr 染导致半导体.
- 半金属Sc/Y合VSi2N4装置显示高磁阻 (10^10%和10^8%) 和100%的旋转过效率在低偏差.
- 反平行磁化揭示了一种双旋过效应.
结论:
- 过渡金属兴奋剂有效调节VSi2N4.4的电子特性.
- 由于其理想的半金属性质,Sc/Y合的VSi2N4显示出对自旋电子应用的显著前景.
- 这项研究为设计用于自旋电子的2D材料提供了理论基础.
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