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在低损耗MgTiO₃陶系统中相位结构,缺陷放松和微波介电特性之间的相关性

Shuai Ma¹, Xiaohua Zhang¹, Jie Zhang²

¹School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi'an 710021, China.

ACS applied materials & interfaces

|January 14, 2025

概括

低损耗Mg2TiO3陶具有出色的微波介电性能,非常适合小型电子设备. 优化的组成提高了介电性能和稳定性,即使在高温下.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
陶工程陶工程陶工程

背景情况:

低损耗微波介电对于推进微波设备小型化和集成至关重要.
开发具有优越性质的新型介电材料是一个持续的研究重点.

研究的目的:

合成不同成分 (n=3-6) 的Mg2TiO3陶.
为了研究相位组成,缺陷行为和微波介电特性之间的相关性.
评估这些陶在高温条件下作为微波电容器的潜力.

主要方法:

通过名义成分Mg2TiO3 (n=3-6) 的陶合成.
使用瑞特维尔德精炼的相组合分析.
通过热刺激脱极化电流 (TSDC) 测量进行缺陷行为调查.
微波介电性质的表征 (εr, Q × f, τf).微波介电性质的表征 (εr, Q × f, τf).
使用高频结构模拟器 (HFSS) 软件进行模拟.
介电温度光谱和充/放电试验.

主要成果:

陶构成了六角MgTiO3和立方Mg2TiO4.4的双相系统.
增加n值会增加MgTiO3含量,而降低Mg2TiO4含量.
与缺陷相关的氧气空缺随着MgTiO3相的增加而减少.
优化的组合 (n=6) 产生了极好的介电性质: εr = 17.55, Q × f = 284,600 GHz, τf = -46.39 ppm/°C.
HFSS模拟将介电常数与电场分布相关联,并预测Q × f值.

结论:

Mg2TiO3陶具有可调节的双相系统,可优化微波介电特性.
富含MgTiO3的化合物中氧空位度降低提高了介电性能.
合成的低损耗Mg2TiO3陶是高温微波电容器的有希望的候选者.

关键词:

在Mgn+1TinO3n+1中缺陷缺陷缺陷缺陷缺陷低损失,低损失的公司.微波电压陶,微波电压陶.热刺激脱极化电流的热刺激脱极化电流

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