3D

Eunjin Lim1, Yongjin Park1, Chaewon Youn1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.

Nano letters
|January 14, 2025
PubMed
概括

这项研究引入了一种新的3D垂直堆叠的铁电记忆结构,使用添加氧化. 新设计为高密度内存和神经形态计算应用提供了增强的性能.

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