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Updated: Jun 2, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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在平面极化触发的WS2-铁电异构的突触装置

Xinxia Qiu1, Shuwen Shen1, Xiaofei Yue1

  • 1School of Information Science and Technology, Fudan University, Shanghai 200433, China.

ACS applied materials & interfaces
|January 14, 2025
PubMed
概括

本研究介绍了使用WS2/PZT异构结构用于神经形态计算的新型memristor. 这些设备提供了更好的统一性,并通过控制Schottky屏障与铁电极化来模拟人工神经网络功能.

关键词:
斯科特基的障碍物是一个障碍.铁电材料是铁电材料.纪念馆是为了纪念.过渡金属二甲基二甲基化物tungsten 硫化二氧化 的使用.

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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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