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一个3D四重互穿的导电金属有机框架,用于快速和强大的离子存储

Zhaoli Liu¹, Juan Chu¹, Linqi Cheng¹

¹Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education and Faculty of Chemistry, Northeast Normal University 5268 Renmin Street Changchun 130024 P. R. China cuifc705@nenu.edu.cn wanghg061@nenu.edu.cn.

Chemical science

|January 15, 2025

概括

一个新的3D导电金属有机框架 (3D c-MOF),Cu-DBC,证明了作为离子电池 (SIB) 的阴极的出色性能. 它独特的结构促进了离子扩散和电子传输,使其具有高容量和稳定性.

科学领域:

材料科学材料科学材料科学
电化学电化学电化学
纳米技术纳米技术

背景情况:

二维导电金属有机框架 (2D c-MOFs) 对金属离子电池具有前景.
在电池应用中,3D交互透的c-MOF尚未得到充分探索.

研究的目的:

探索3D四倍互穿的c-MOF (Cu-DBC) 作为离子电池 (SIB) 的阴极.
研究Cu-DBC用于SIBs的结构和电化学特性.

主要方法:

使用结合的二[g,p]二烯-2,3,6,7,10,11,14,15-八 (DBC) 连接物合成一个3D四重互穿的c-MOF (Cu-DBC).
用Cu-DBC作为SIBs的阴极材料的电化学表征.
现场/现场表征和理论计算以阐明离子储存机制.

主要成果:

-DBC在0.05 A g-1.1下表现出高特异容量,为120.6 mA h g-1 在0.05 A g-1.
该材料表现出强大的循环稳定性,在2Ag-1.1.1的4000个循环后,仅有18.1%的容量消失.
在极端温度 (-20°C和50°C) 中观察到良好的电化学性能.

结论:

Cu-DBC的3D互穿结构促进了电子和离子运输,使其适合SIB阴极.
离子储存机制涉及[CuO4]单元上的三电子氧化还原过程.
这项研究为开发先进的金属离子电池的3D互穿c-MOF提供了洞察力.

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