对n型基于TiCoSb的热电设备的低界面电阻的有利接触
Ajay Kumar Verma1,2,3, Kishor Kumar Johari2,3, Shamma Jain2,3
1School of Engineering, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia.
ACS applied materials & interfaces
|January 15, 2025
概括
开发稳定,低电阻的电接触对于高效的半Heusler热电器件至关重要. 这项研究引入了TiCoSb基材料的高度化半导体接触,显著提高了性能和热稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 能源转换 能源转换
背景情况:
- 半豪斯勒 (HH) 热电 (TE) 材料在能源采集方面表现有前途.
- 由于制造稳定,界面阻力低的电接触器的挑战,HHTE设备的实际应用受到阻碍.
- 以前使用Fe,Co和Ti作为基于TiCoSb的TE材料的接触点的尝试遇到了诸如粘合不良,高阻力和扩散等问题.
研究的目的:
- 探索一种具有较低界面电阻的稳定接触材料,用于n型基于TiCoSb的热电材料.
- 为了证明高化半导体 (HDS) 接触对提高 TE 设备性能的有效性.
主要方法:
- 使用火花等离子烧结制造Ti0.85Nb0.15CoSb0.96Bi0.04热电材料的制造.
- 测试各种金属接触 (Fe,Co,Ti) 和一个高度杂的半导体 (HDS) 接触 (Ti0.7Nb0.3CoSb).
- 界面特性,电子传输和设备输出功率的表征.
主要成果:
- 由于扩散和高电位屏障,Ti金属接触显示出高电阻 (~300 mΩ).
- HDS接触 (Ti0.7Nb0.3CoSb) 呈现出优异的原子结合,晶体结构匹配,以及与TE材料的稳定性.
- 与HDS接触的TE脚实现了优异的电子传输,低接口电阻 (~15 mΩ),在ΔT = 451 K时的最大输出功率为30.7 mW.
结论:
- 高度杂的半导体 (HDS) 材料作为半Heusler热电材料的接触器是有效的.
- 使用相同的HHTE材料的HDS接触器可确保原子结合,晶体结构兼容性和热稳定性.
- 这种方法显著降低了接口电阻,并提高了热电设备的整体性能和热稳定性.
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