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Updated: Jun 2, 2025

Using Microwave and Macroscopic Samples of Dielectric Solids to Study the Photonic Properties of Disordered Photonic Bandgap Materials
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在具有高斯分布式带隙能量的直接带隙半导体中,用于光学电容的分析模型

Chencheng Xu, Joachim Vollbrecht, Roland Clausing

    Optics letters
    |January 16, 2025
    PubMed
    概括

    我们介绍了多晶半导体的高斯分布式临界点模型. 这种新模型准确地描述了化佩洛夫斯基特等材料的光学导电性,改进了现有的方法.

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