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基于基于读取的比例电阻状态 (3R) 的记忆三元逻辑
Feng Liu1, Leon Brackmann2, Xianyue Zhao3
1Peter Gruenberg Institut (PGI-7), Forschungszentrum Juelich GmbH, Juelich, Germany.
概括
使用电阻随机访问存储器 (ReRAM) 的三元逻辑显示出对内存计算 (CIM) 的承诺. 这种多值逻辑系统比传统的二进制系统提高了存储密度和计算效率.
科学领域:
- 材料科学 材料科学 材料科学
- 计算机科学 计算机科学
- 电气工程 电气工程
背景情况:
- 对高效的计算方法的需求推动了对内存计算 (CIM) 的研究.
- 与二进制逻辑相比,多值逻辑系统,特别是三进制逻辑,提供了增加存储密度和计算效率的潜力.
- 电阻随机存储器 (ReRAM) 设备具有适用于CIM集成的多级编程功能.
研究的目的:
- 调查使用ReRAM设备在CIM范式内实现三元逻辑的可行性.
- 评估三元 Łukasiewicz 逻辑对于 ReRAM 横条数组中的信号映射和基于电压的计算的适用性.
- 分析设备变化的影响,并探索基于ReRAM的三元CIM中的并行操作能力.
主要方法:
- 在1T1R横条数组中使用ReRAM设备实现三元 Łukasiewicz逻辑.
- 在集成的ReRAM芯片 (内存高级演示器200毫米) 上进行验证.
- 调查记忆设备的可变性和并行运行潜力.
主要成果:
- 在基于ReRAM的CIM中证明了三元逻辑操作的可行性.
- 证实了三元 Łukasiewicz 逻辑对于基于电压读取的计算的适用性.
- 评估了设备可变性对逻辑计算准确性和并行处理能力的影响.
结论:
- 与ReRAM集成的三元逻辑是推进内存计算的可行方法.
- 拟议的方法提供了增强的存储和计算效率,为未来的计算平台铺平了道路.
- 对设备可变性和并行操作的进一步研究对于优化基于ReRAM的三元CIM系统至关重要.
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