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Updated: Jun 2, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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在短通道IGZO场效应晶体管中构成和通道长度依赖的短暂特征的建模

Donguk Kim1, Dayeon Lee1, Wonjung Kim1

  • 1School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea.

ACS applied materials & interfaces
|January 16, 2025
PubMed
概括

本研究检查了氧化 (IGZO) 场效应晶体管 (FET) 中的快速过渡性排水电流 (I_D). 具有特定Ga成分的设备G显示了对短通道中超速电流的提高免疫力,提高了可靠性.

关键词:
没有形态的InGaZnOO阴离子组成比率比率.频道长度 频道长度 频道长度快速过渡的排水电流.场效应晶体管的领域效应晶体管.氧化物半导体 半导体

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