在为纳米电子产品的低功率,无形成,高度稳定的TiOx记忆器的追求中,冲浪增长参数

Dilruba Hasina1,2, Aparajita Mandal1, Sanjeev Kumar Srivastava3

  • 1SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India.

概括

这项研究优化了二氧化 (TiO2) 薄膜用于纳米级的memristors. 鲁二氧化中最佳的固体测量使得先进的记忆技术可以实现无形成,低功耗和稳定的电阻切换.

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