在近魔法角度扭曲双层石墨烯中低频电阻噪声
Pritam Pal1, Saisab Bhowmik2, Aparna Parappurath1
1Department of Physics, Indian Institute of Science, Bangalore 560012, India.
ACS nano
|January 17, 2025
概括
在扭曲双层石墨烯 (tBLG) 中的噪声测量揭示了在高温和低温下不同的行为. 在高温下,观察到1/f噪声,而在低温下显示一个随机的电报信号,突出显示了对电子相和相互作用的敏感性.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子电子学 量子电子学
背景情况:
- 低频电阻波动 (噪声) 对设备性能和探测电子性能至关重要.
- 在魔法角度附近的扭曲双层石墨烯 (tBLG) 由于强烈的相关性而表现出复杂的电子相.
- 了解tBLG中的噪声机制是利用其独特电子行为的关键.
研究的目的:
- 为了调查tBLG在魔力角度附近的电噪声的特征和起源.
- 在tBLG中将噪声信号与电子相和相互作用效应相关联.
- 与传统运输方法相比,评估噪声测量的灵敏度.
主要方法:
- 在tBLG样本上进行了电阻噪声测量,测量距离魔法角 (θ ∼ 1°) 附近.
- 噪声测量在各种温度范围内进行,从高 (60-70 K) 到低 (10 K).
- 使用功率光谱密度 (PSD) 分析来描述噪声的频率依赖性.
主要成果:
- 在高温下,噪声遵循1/f功率光谱密度,与麦克沃特模型相一致.
- 在低温下,观察到具有1/f^2类PSD的双级随机电报信号 (RTS),归因于hBN缺陷共振.
- 莫雷波段内的低温噪声在特定填充处呈现最小值,与范霍夫奇点和强大的库伦相互作用相关.
结论:
- 在tBLG中的噪声表现出明显的温度依赖的行为,为不同的散射和相互作用机制提供了洞察力.
- 观察到的低温RTS与封装hBN层的相互作用有关.
- 噪声测量对tBLG中的相互作用效应比传统的时间平均运输测量更敏感.
相关概念视频
Magnetic Field Due To A Thin Straight Wire
4.7K
Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
4.7K
Magnetic Field Due to Two Straight Wires
2.4K
Consider two parallel straight wires carrying a current of 10 A and 20 A in the same direction and separated by a distance of 20 cm. Calculate the magnetic field at a point "P2", midway between the wires. Also, evaluate the magnetic field when the direction of the current is reversed in the second wire.
2.4K
π Electron Effects on Chemical Shift: Overview
1.0K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.0K
Gauss's Law in Dielectrics
4.2K
Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...
4.2K
Biasing of Metal-Semiconductor Junctions
204
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
204
Resistance and Conductance
72
A conductor's DC resistance at a given temperature is influenced by its resistivity, length, and cross-sectional area. Resistivity is an inherent property of the conductor material, with annealed copper serving as the international standard for measurement. For instance, the resistivity of hard-drawn aluminum at 20 degrees Celsius is 61% of the standard conductivity of annealed copper.
Various factors impact the resistance of a conductor. Spiraling in stranded conductors increases their...
Various factors impact the resistance of a conductor. Spiraling in stranded conductors increases their...
72


