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基于ITZO的自排列顶端门薄膜晶体管,具有长时间保留2T0C DRAM的最小寄生容量

Jeong-Min Park^1,2, Sein Lee^1,2, Junseo Lee^1,2

¹School of Integrated Technology, Yonsei University, Seoul 03722, Republic of Korea.

|January 20, 2025

概括

研究人员开发了一种新的两晶体管,零电容 (2T0C) 增益细胞内存,使用自行调整的顶端薄膜晶体管 (TFT). 这项创新显著降低了寄生电容,使高级内存应用程序能够保留异常长的数据.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体设备半导体设备

背景情况:

传统的两晶体管,零电容 (2T0C) 存储器架构存在寄生式容量问题,限制了性能.
尽量减少这些寄生能力对于实现长时间的数据保留和高耐久性至关重要.

研究的目的:

开发了一种新的2T0C增益细胞存储器,具有自我调整的顶端门 (SATG) 结构薄膜晶体管 (TFT).
设计一个氧化 (ITZO) 道内置架构,最大限度地降低寄生电容,用于增强内存操作.

主要方法:

制造2T0C增益细胞内存,使用自行调整的顶端门 (SATG) 结构.
在TFT架构中整合一个氧化 (ITZO) 通道材料.
记忆性能的表征,专注于保留时间,非电流,偏差稳定性和移动性.

主要成果:

SATG 设计有效地将四个非必需的寄生电容降低到接近零,仅保留了必需的门绝缘器电容 (C_OX).
基于ITZO的2T0C内存的保留时间超过了10,000秒.
实现了极低的偏离电流 (2.33 × 10-18 A/μm),优越的正偏移稳定性 (0.71 V) 和高和流动性 (17.52 cm2 / V s)).

结论:

基于ITZO开发的2T0C增益细胞内存为下一代3D集成堆叠动态随机访问内存 (DRAM) 提供了一个有希望的解决方案.
新的SATG结构为未来的记忆架构设定了新的标准,强调长时间的保留和高耐久性.

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