通过电子反射散射衍射和共聚焦拉曼光谱学进行二维应变映射
Andrew J Gayle1, Lawrence H Friedman1, Ryan Beams1
1Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Journal of applied physics
|January 20, 2025
概括
研究人员使用电子反射散射衍射 (EBSD) 和拉曼光谱学绘制了中的应变场. 这些技术准确地评估了多轴应变状态,提高了微电机系统 (MEMS) 的可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 固体力学 固体力学是什么
- 纳米技术纳米技术
背景情况:
- 中的球形缩会产生复杂的残余应变场.
- 精确地绘制这些应变场对于理解材料行为和设备可靠性至关重要.
- 现有的技术在表征多轴应变状态方面可能存在局限性.
研究的目的:
- 为了绘制二维 (2D) 应变场的地图,围绕着中的球形缩影.
- 评估和比较电子反射散射衍射 (EBSD) 交叉相关性和对焦拉曼光谱的精度,用于应变映射.
- 评估这些技术在提高微电子机械系统 (MEMS) 可靠性的潜力.
主要方法:
- 使用电子反射散射衍射 (EBSD) 交叉相关的二维 (2D) 应变映射.
- 混焦拉曼光谱用于绘制残余应力.
- 在 (001) 表面上承受 200 mN 负荷的球形痕.
- 生成50微米×50微米地图,分辨率为128像素×128像素.
主要成果:
- EBSD揭示了一个残余应变场,表面内有正常和剪切应变,呈现双重对称性.
- 拉曼光谱显示了一个残余的拉曼移位场,具有正移位和四倍对称.
- 两种应变场均从接触处延伸到大约三到四个隙直径.
- 结合机械光谱分析的EBSD结果,成功预测了拉曼移位图的特征.
结论:
- 电子反射散射衍射 (EBSD) 和共聚焦拉曼光谱是绘制二维应变场在中的有效技术.
- 这项研究证明了这些方法在表征多轴应变状态方面的能力.
- 这些技术可以通过识别关键应变场来提高微电子机械系统 (MEMS) 的可靠性.
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