高旋转轨道扭矩效率由工程旋转吸收诱导,用于完全电驱动的磁化开关
Pengwei Dou1, Jingyan Zhang1, Tao Zhu2
1School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, University of Science and Technology Beijing, Beijing 100083, China. jyzhang@ustb.edu.cn.
Materials horizons
|January 20, 2025
概括
旋转轨道扭矩 (SOT) 的效率通过Pt/Co/Ir三层机的工程接口来提高. 插入Gd层显著降低了先进的自旋电子的关键切换电流密度.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 旋转轨道扭矩 (SOT) 驱动的磁化开关对于下一代旋转电子非常重要.
- 低电荷旋转转换效率和高临界开关电流密度阻碍了SOT设备的开发.
研究的目的:
- 为了提高Pt/Co/Ir三层机的SOT效率,使用自旋吸收工程.
- 为了降低基于SOT的存储元件的关键开关电流密度.
主要方法:
- 通过在Pt/Co/Ir三层中插入稀有金属层 (例如Gd) 来进行接口工程.
- 测量关键切换电流密度和有效旋转霍尔角度.
- 第一个原则计算和极化中子反射力用于机制分析.
主要成果:
- 插入4.0nm Gd层将关键开关电流密度降低了58%,至7.5 × 10^6 A cm^-2.
- 有效旋转霍尔角增加到0.29,大约是Pt/Co/Ir.的三倍.
- 自发的界面 CoGd 合金形成增强了自旋混合导电性.
- 观察到可调节的确定性无场切换极性.
结论:
- 铁磁/非磁界面的旋转吸收工程是高SOT效率的有效策略.
- 开发的方法为低消耗的自旋电路提供了一条途径.
- 了解界面效应是优化自旋-电荷转换机制的关键.
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