基于马克思脉冲变压器混合架构的脉冲电源,采用MOSFET电阻二极管磁重置控制方法,用于介电屏障放电应用
Caiyong Zou1, Yunfeng Jiang1, Yajun Zhao1
1College of Electrical Engineering and Control Science, Nanjing Tech University, Nanjing 211816, Jiangsu, China.
The Review of scientific instruments
|January 22, 2025
概括
一种新的MOSFET电阻二极管 (MRD) 重置方法有效地解决了介电屏障放电 (DBD) 的纳米秒脉冲电源中的磁芯和. 这提高了血放电强度和颗粒数.
科学领域:
- 电气工程 电气工程
- 等离子体物理学的物理学
背景情况:
- 纳米秒脉冲功率为介电屏障放电 (DBD) 提供了优势,包括更好的效果和效率.
- 使用马克思电路和脉冲变压器 (PT) 的高压脉冲电源 (HV-PVPS) 对DBD具有成本效益,但受到PT磁芯和的影响.
研究的目的:
- 为DBD应用提出和验证一种新的MOSFET电阻二极管 (MRD) 重置方法,以克服基于马克思-PT的HV-PVPS中的磁芯和.
- 为了提高等离子体放电参数和整体系统性能.
主要方法:
- 开发一个多模块的马克思-PT系统模型,其中包含一个MRD磁重置分支.
- 实施MRD重置方法的控制策略,以优化系统性能.
- 建造和测试一个15kV的HV-PVPS原型,以证明MRD方法的有效性.
主要成果:
- 拟议的MRD重置方法成功地防止了脉冲变压器中的磁芯和.
- 增强了等离子体放电强度,增加了放电空间中带电粒子的数量.
- 15kV原型实现了显著改善的平均脉冲功率输出400W,有效地驱动各种DBD反应堆.
结论:
- 在马克思-PT HV-PVPS中,MRD重置方法是DBD磁芯和的可行解决方案.
- 这种方法改善了等离子体放电特性,并增加了系统输出功率.
- 经过验证的原型证明了DBD应用的实际应用性和增强性能.
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