基于双轴装置的高效率和无外部场的旋转轨道扭矩切换之间的困境的内在解决方案
Biao Wu1, Siyuan Jiang1, Di Wang1
1School of Microelectronics, University of Science and Technology of China, Hefei 230026, People's Republic of China.
Nano letters
|January 22, 2025
概括
旋转轨道扭矩 (SOT) 为磁性随机访问记忆 (MRAM) 提供快速写入. 使用双轴系统本质上解决了在SOT-MRAM设备中实现高开关效率而不需要外部场的挑战.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 旋转轨道扭矩 (SOT) 是磁随机存取记忆 (MRAM) 的一个有前途的技术,因为它的速度和稳定性.
- 在SOT设备中,一个关键的挑战是实现无场开关和高开关效率之间的不兼容性.
研究的目的:
- 提出和展示一种新的方法,以内在克服SOT设备的局限性.
- 为了在SOT-MRAM中实现高效率和无外部场的切换.
主要方法:
- 使用双轴系统解决SOT切换挑战的理论建议.
- 在MgO/Fe/W装置中对拟议方案的实验演示.
主要成果:
- 双轴系统本质上解决了SOT中高开关效率和无外部场的操作之间的困境.
- 双轴装置的内在多态存储能力被证明可以弥补增加的面积要求.
结论:
- 拟议的双轴系统方法为先进的SOT-MRAM开发提供了可行的解决方案.
- 这项工作为克服基于SOT的内存技术的关键挑战铺平了道路.
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