Search research articles

关于 JoVE

概览领导团队博客 JoVE 帮助中心

作者

出版流程编辑委员会范围与政策同行评审常见问题投稿

图书馆员

用户评价订阅访问资源图书馆顾问委员会常见问题

研究

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments 存档

教育

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual 教师资源中心教师网站

使用条款与条件

相关概念视频

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序

Same author

Al-Bi<sub>2</sub>Se<sub>3</sub>-Al Nanoribbon Josephson Junctions with Fabry-Pérot Interference: Implications for Phase-Coherent Topological Insulator-Based Superconducting Devices.

ACS applied nano materials·2026

Same author

Multidirectional Spin-Orbit Torque Magnetization Dynamics in beyond Room Temperature Van der Waals Magnet Devices.

Nano letters·2026

Same author

Bulk Spin-Orbit Torque-Driven Spin Hall Nano-Oscillators Using PtBi Alloys with Engineered Crystallinity.

ACS applied materials & interfaces·2026

Same author

Nanoelectronics with Two-Dimensional Magnets.

Nano letters·2026

Same author

Nitrogen vacancies in graphitic carbon nitride and their role in heterogeneous photocatalysis.

Materials horizons·2026

Same author

Amorphous intermediates and discovery of a kinetic polymorph of BiVO<sub>4</sub> from heating V+Bi+Zn single-source precursors.

Nature communications·2026

Search research articles

相关实验视频

Updated: May 31, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

超细半导体 WS2 纳米丝带场效应晶体管

Md Anamul Hoque¹, Alexander Yu Polyakov², Battulga Munkhbat²

¹Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.

|January 23, 2025

概括

研究人员开发了一种新方法来制造超细二硫化物 (WS2) 纳米带,使得可调节的纳米电子设备. 这项技术控制了纳米带宽,用于先进的半导体应用.

关键词:

2D 半导体半导体门痛症 (TMDs) 是一种门痛症.在WS2上,我们可以看到WS2.结晶学控制的纳米结构化.电极二极管是指二极管,它们是指二极管.场效应晶体管的领域效应晶体管.纳米带是一种纳米带.过渡金属二甲基二甲基化物齐格扎格的边缘可以看到.

更多相关视频

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

相关实验视频

Last Updated: May 31, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

半导体过渡金属二甲基化物 (TMDs) 是对高性能,高能效的纳米电子有希望的.
在TMD场效应晶体管 (FET) 中制造30nm以下的通道和实现原子级边缘控制仍然具有挑战性.

研究的目的:

为了演示一个晶体学控制的纳米结构技术的超细二硫化 (WS2) 纳米丝带.
为了研究不同宽度的WS2纳米丝带接口的电气性能.
探索窄通道效应对WS2纳米丝带FET传输特性的影响.

主要方法:

结晶学控制的纳米结构技术.
制造超细二硫化 (WS2) 纳米丝带 (宽度小于10 nm).
描述WS2纳米带连接和FET的电流-电压 (I-V) 特性.

主要成果:

成功制造了WS2纳米丝带,其窄度为10nm以下.
具有不同宽度的WS2纳米带连接处表现出二极管电流电压特性.
纳米带FET的运输特性主要是由窄通道效应,移动性受到边缘散射的限制.

结论:

开发的技术可以通过控制纳米结构大小来创建和调整纳米尺寸设备属性.
这些发现为开发下一代范德瓦尔斯半导体基设备和纳米级电路提供了途径.
边缘散射显著影响了超细通道中的载体流动性,这对未来的纳米设备设计至关重要.