无蚀刻可干开发的极端紫外光电阻材料,使用N-异环碳酸金属复合体
Dowon Kim1, Jinhwan Byeon1, Jaeboong Ahn1
1Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
Small (Weinheim an der Bergstrasse, Germany)
|January 23, 2025
概括
基于N-异环碳素 (NHC) 的新型光电阻可以实现无蚀刻剂的极紫外线 (EUV) 石版. 这种可持续,具有成本效益的方法通过简单的热开发实现了高分辨率的纳米模式,克服了湿过程的局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 化学工程是化学工程的重要组成部分.
背景情况:
- 极端紫外线 (EUV) 石版面临的挑战是湿过程中的图案崩.
- 现有的干燥开发方法通常使用有毒蚀刻剂或专用设备.
- 在纳米制造中需要可持续和经济的替代品.
研究的目的:
- 为了合成新的,无蚀刻,干燥可开发的EUV光电阻.
- 研究这些新型光电阻中的EUV诱导的化学机制.
- 用一个简单的热开发过程来演示高分辨率纳米图案.
主要方法:
- 合成基于N-异环碳素 (NHC) 的金属联体复合物用于光电阻.
- 描述EUV敏感性和发展过程.
- 使用先进光谱学 (EUV-PES,NEXAFS,XPS) 和DFT分析EUV诱导的化学反应.
- 用80nm分辨率进行纳米图案的演示.
主要成果:
- 在8.5或27mJcm-2的半和剂量下达到高EUV灵敏度.
- 在标准炉中使用简单的热干开发来证明80nm分辨率.
- 观察到的线边粗度 (LER) 与传统的湿地发育模式相比较.
- 确定由二次电子和光电子启动的分支聚合作为高灵敏度的关键机制.
结论:
- NHC金属有机光电阻提供了一个可持续和经济的替代方案,用于EUV光刻.
- 无蚀刻,干燥开发过程消除了危险化学品,并简化了制造.
- 这项技术通过高效的热处理实现了高分辨率的图案设计,从而推进了纳米制造.
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