MoSememristor

Yumo Li1, Hao Sun1, Langchun Yue1

  • 1Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.

概括

这项研究展示了一种新型的MoSe2记忆器,作为人工突触,展示了高级人工智能的类似大脑功能. 该设备表现出稳定的切换和各种突触可塑性行为,使神经形态计算应用成为可能.