微电子工业中AlxGa1-xN材料应变松的比较电子衍射分析:4D-STEM方法与基于TEM的N-PED解决方案
Estève Drouillas1, Jean-Gabriel Mattei2, Bénédicte Warot-Fonrose3
1STMicroelectronics Crolles, 850 Rue Jean-Monnet, Crolles 38926, France; CEMES-CNRS, 29 Rue Jeanne Marvig, Toulouse 31055, France.
Micron (Oxford, England : 1993)
|January 23, 2025
概括
传输电子显微镜技术,4D-STEM和 Nanobeam 前置电子衍射 (N-PED),有效地绘制了AlGaN/GaN HEMT设备中的应变. 这两种方法在薄样本上显示了可比的结果,但在较厚的样本上存在局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 微电子工程 微电子工程
背景情况:
- 传输电子显微镜 (TEM) 提供高空间分辨率和化学敏感性,用于先进的材料表征.
- 先进的微电子技术需要对局部结构和化学特性进行精确的分析.
- 应变分析对于了解半导体器件中缺陷程度和应力场至关重要.
研究的目的:
- 为了评估4D-STEM和 Nanobeam前置电子衍射 (N-PED) 的可行性,用于工业应变分析.
- 为了比较4D-STEM和N-PED在AlGaN/GaN HEMT设备中的菌株映射的性能.
- 评估样本厚度对这些应变分析技术准确性的影响.
主要方法:
- 使用了基于4D-STEM和TEM的低合角度的 Nanobeam 前置电子衍射 (N-PED).
- 在具有不同截面厚度 (≈55 nm和≈150 nm) 的AlGaN/GaN HEMT设备上进行了应变映射.
- 专注于识别拉伸趋势和由缺陷引起的变形,而不是绝对拉伸值.
主要成果:
- 4D-STEM和N-PED都为薄的TEM样本 (≈55 nm) 提供了可比的菌株分布图.
- 这些技术成功地描述了AlGaN/GaN HEMT结构中的1纳米AlN间隔层诱导的变形.
- 在分析较厚的TEM样本 (≈150 nm) 时,观察到两种商业解决方案的限制.
结论:
- 4D-STEM和N-PED是微电子工业应变分析的可行商业解决方案,特别是对于薄样品.
- 技术的选择和样本的准备对于精确的菌株映射至关重要,厚度是一个重要的因素.
- 可能需要进一步开发以克服分析更厚的半导体设备截面的局限性.
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