交点铁电Hf0.5Zr0.5O2 电容器用于剩余的偏振驱动内存计算
Minjong Lee1, Peng Zhou1, Heber Hernandez-Arriaga2
1Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Nano letters
|January 23, 2025
概括
铁电 hafnium氧化物 (HZO) 电容器提供可靠的内存计算. 在HZO突触中利用残余偏振切换可以提高神经形态应用的准确性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 铁电 hafnium氧化物 (HZO) 电容器正在探索内存计算 (IMC) 由于非挥发性和过程兼容性.
- 使用HZO电阻/电容状态进行矢量矩阵乘法 (VMM) 的现有IMC方法面临准确性和可靠性挑战.
研究的目的:
- 提出和验证一种新的IMC方法,使用铁电HZO电容器突触的残余极化 (Pr) 切换.
- 为了提高神经形态IMC应用中的准确性和可靠性.
主要方法:
- 在HZO电容突触中使用Pr切换进行模式识别任务的实验演示.
- 复杂的推理任务的大规模模拟以评估性能和稳定性.
主要成果:
- 由于高开/关比,Pr开关的电压读取显示出极好的准确性和可靠性.
- 在复杂的推理任务中,模拟实现了高精度和对设备变异的免疫力.
结论:
- 在铁电HZO电容器突触中提出的Pr切换范式显示了近期神经形态IMC的显著前景.
- 这种方法提供了一种可靠和准确的方法,用于在先进的计算架构中实现突触函数.
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