软X射线发射光谱中的自我吸收效应用于半导体的带隙评估
Masami Terauchi1, Yohei K Sato1
1Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan.
Microscopy (Oxford, England)
|January 24, 2025
概括
这项研究研究了半导体发射光谱中的自我吸收效应,确定了,β-化和钻石的带隙能量. 结果证实了该方法的方法.
科学领域:
- 固态物理 固态物理
- 材料科学是一种材料科学.
- 频谱学是一种光谱学.
背景情况:
- 在X射线发射光谱中的自我吸收效应可以影响背景强度.
- 了解这些影响对于准确的电子结构确定至关重要.
研究的目的:
- 调查Si L发射和CK发射光谱中的自我吸收效应.
- 使用辐射光谱学来确定Si,β-Si3N4,钻石和石墨的带隙能量.
主要方法:
- 对Si和β-Si3N4.4的Si L发射光谱中的背景强度的分析.
- 钻石和石墨的CK辐射光谱的检查.
- 将吸收边缘位置分配给传导带 (CB) 边缘.
- 通过同时观察价值带 (VB) 和CB边缘来确定带隙能量.
主要成果:
- Si的带隙能量确定为1.1 eV,与其间接带隙相一致.
- β-Si3N4 的带隙能量评价为 5.1 eV.
- 钻石的带隙能量计算为5.0 eV.
- 在石墨的CK发射光谱中观察到的边缘结构,归因于自我吸收.
结论:
- 同时观察VB和CB边缘是确定半导体带隙能量的可行方法.
- 在石墨的CK发射频谱中,自我吸收边缘是由特定的电子转换引起的.
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