优化CuOx/Ga2O3异质连接二极管用于高压电力电子产品
Xiaohui Wang1,2, Mujun Li1, Minghao He1,3
1School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China.
Nanomaterials (Basel, Switzerland)
|January 24, 2025
概括
优化铜氧化物 (CuOx) 在CuOx/氧化物 (Ga2O3) 异质连接二极管 (HJD) 的结构参数显著提高了断裂电压. 双层设计实现了2780V的断裂电压和功率电子器件的低电阻.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 电力电子 电力电子 电力电子
背景情况:
- 氧化 (Ga2O3) 是一个有前途的材料,用于高功率电子产品,由于其宽带间隙.
- 优化异质连接二极管 (HJD) 对于提高设备性能至关重要.
- 控制屏障层的结构参数,例如氧化铜 (CuOx),是设备效率的关键.
研究的目的:
- 通过定制CuOx结构参数来优化CuOx/Ga2O3异质连接二极管 (HJD).
- 调查CuOx层尺寸和孔度对HJD电气性能的影响.
- 设计和优化双层CuOx结构,以改善功率处理.
主要方法:
- 通过调整Ar/O2气体比率,精确控制喷射CuOx中的孔度.
- 使用实验调查和TCAD模拟来评估HJD性能.
- 系统地分析了CuOx层尺寸和孔度的影响.
主要成果:
- 增加CuOx层直径和优化孔度,通过减轻电场拥挤,提高了单层HJD中的故障电压 (VB).
- 一个双层CuOx结构 (p+ CuOx/p- CuOx) 被优化为VB和特定的电阻 (Ron,sp) 之间的理想平衡.
- 优化的双层HJD实现了2780V的高VB,6.46mΩ·cm2的低Ron,sp,以及1.2GW/cm2的功率功率.
结论:
- 定制CuOx结构参数为提高Ga2O3设备性能提供了一个有希望的策略.
- 优化的CuOx/Ga2O3 HJD显示了高级功率电子应用的巨大潜力.
- 开发的双层结构为基于高压,高性能Ga2O3的电源设备提供了通路.
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