CuOx/Ga2O3

Xiaohui Wang1,2, Mujun Li1, Minghao He1,3

  • 1School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China.

PubMed
概括

优化铜氧化物 (CuOx) 在CuOx/氧化物 (Ga2O3) 异质连接二极管 (HJD) 的结构参数显著提高了断裂电压. 双层设计实现了2780V的断裂电压和功率电子器件的低电阻.

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