基于的全固态电池可以在不受外部压力影响的情况下运行
Zhiyong Zhang1, Xiuli Zhang2, Yan Liu3
1Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen University, Xiamen, China.
Nature communications
|January 24, 2025
概括
基全固态电池的新型双层阳极消除了对外部压力的需求. 这一突破提高了离子流量和电池稳定性,为更安全,高能量密度的应用铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 储能 储能 储能 储能 储能 储能
背景情况:
- 基于的全固态电池 (ASSB) 承诺高能量密度和安全性.
- 对于ASSB来说,一个主要的挑战是对高外部压力的要求,以确保适当的电极接触和离子导电性.
- 这种压力要求阻碍了实际应用和可扩展性.
研究的目的:
- 为ASSB开发一种新型阳极,可以在没有外部压力的情况下运行.
- 为了增强离子流量和稳定性在阳极接口.
- 提高基于的ASSB的循环性能和安全性.
主要方法:
- 使用冷压烧结Li21Si5合金制造一个Li21Si5/Si-Li21Si5双层阳极.
- 对阳极的分层结构,离子/电子导电和导电网络的描述.
- 在ASSB中对阳极进行电化学测试,包括在各种条件下对静电循环和性能评估.
主要成果:
- 双层阳极表现出一个顶部Li21Si5层与混合离子/电子导电和一个底部Si-Li21Si5层与3D连续导电网络.
- 阳极通过在阳极的固态电解质接口上产生均的电场来实现不受外部压力的操作.
- 在45°C时达到10 mAh cm−2的临界电流密度,容量为10 mAh cm−2,并且一个电池在1000个循环后表现出97%的初始库伦比效率和低膨胀.
结论:
- 开发的Li21Si5/Si-Li21Si5阳极有效地解决了基于的ASSB的外部压力挑战.
- 独特的阳极结构促进了高效的离子和电子运输,从而改善了离子流量和应力消散.
- 这一进步有助于为未来的储能应用开发更安全,高性能的ASSB.
相关概念视频
03:12Batteries and Fuel Cells
26.9K
A battery is a galvanic cell that is used as a source of electrical power for specific applications. Modern batteries exist in a multitude of forms to accommodate various applications, from tiny button batteries such as those that power wristwatches to the very large batteries used to supply backup energy to municipal power grids. Some batteries are designed for single-use applications and cannot be recharged (primary cells), while others are based on conveniently reversible cell reactions that...
26.9K
01:20Types of Semiconductors
499
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
499
01:11P-N junction
459
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
459
01:25MOS Capacitor
688
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
688
01:21DC Battery
741
A conductor needs to be a component of a path that creates a closed loop or full circuit to have a continuous current flowing through it. A current starts to flow if an electric field is created inside an isolated conductor that is not part of a full circuit. The conductor quickly develops a net positive charge at one end and a net negative charge at the other. These charges generate an electric field opposite the direction of the applied electric field, which reduces the current. Eventually,...
741
01:01Energy Bands in Solids
691
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
691