SiC NPN 辐射探测器的X射线性能
Jing Wang1,2, Leidang Zhou3,4, Liang Chen2
1School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|January 25, 2025
概括
一个碳化 (SiC) 光传感器被开发为辐射探测器,具有厚厚的敏感区域,以改善能量沉积. 这种新型的SiC npn探测器表现出稳定的X射线反应和内部增益,显示了先进辐射检测应用的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 辐射检测检测器可以检测到辐射.
背景情况:
- 传统的光电探测器具有薄薄的敏感区域,限制了辐射粒子的能量沉积.
- 碳化 (SiC) 为辐射检测提供了卓越的材料特性,包括高热导率和辐射硬度.
研究的目的:
- 制造和描述一个开放基碳化 (SiC) npn光传感器,用于作为辐射探测器.
- 在高能X射线照明下评估SiC npn探测器的性能,重点关注其响应特性和内部增益.
主要方法:
- 制造一个具有30微米厚度的敏感区域的开放基SiC npn光传感器.
- 检测器对高能X射线 (高达30keV) 的反应的表征,通过一系列剂量速率 (0.07660.766 Gy·s-1).
- 测量普通发射器电流增益和分析短暂响应特征.
主要成果:
- SiC npn探测器对300V以下的X射线呈现出稳定和清晰的反应.
- 观察到一个普通发射器电流增益,由于早期效应,随着偏差电压的增加而增加,在300V时达到7.55.
- 与SiC二极管相比,探测器的延迟时间更长,这是由于其npn结构的有效电容.
结论:
- 制造的SiC npn光传感器有效地作为辐射探测器,具有显著的内部增益.
- 厚厚的敏感区域和SiC固有的特性有助于其高能量沉积能力.
- SiC npn探测器展示了未来辐射探测技术的有希望的潜力.
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