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Updated: May 31, 2025

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频道层厚度对高频应用的GaN HEMT性能的影响

Qian Yu¹, Sheng Wu², Meng Zhang¹

¹School of Microelectronics, Xidian University, Xi'an 710071, China.

|January 25, 2025

概括

这项研究调查了化/化 (AlGaN/GaN) 高电子流动性晶体管 (HEMT),该研究揭示了UID-GaN通道厚度会影响铁尾部,影响设备性能并提供表轴设计见解.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
电子工程电子工程

背景情况:

化/化 (AlGaN/GaN) 高电子流动性晶体管 (HEMT) 对于高功率和高频应用至关重要.
HEMT的性能受到化 (GaN) 通道和缓冲层的特性显著的影响.

研究的目的:

调查非故意兴奋剂GaN (UID-GaN) 通道厚度对AlGaN/GaN HEMT的性能的影响.
分析不同UID-GaN厚度对铁尾部的影响及其与二维电子气体 (2DEG) 的相互作用.

主要方法:

具有不同UID-GaN通道厚度的AlGaN/GaN HEMT的制造和表征.
使用一种常见的200nm GaN缓冲层,具有特定的铁 (Fe) 合度 (8 × 10^17 cm^-3).
基于UID-GaN层厚度,分析到达2DEG的Fe轨道的度.

主要成果:

断裂电压 (Vbr) 随着 GaN 缓冲层中的 Fe-doping 度的增加而增加.
与度较高的设备相比,度较低的Fe-doped尾巴设备的移动性更高.
不同的UID-GaN厚度导致不同度的Fe轨道影响2DEG.

结论:

UID-GaN层的厚度极大地影响了Fe-doped尾部度,因此影响了2DEG的特性.
优化UID-GaN厚度对于在AlGaN/GaN HEMT中平衡分解电压和电子流动性至关重要.
这些发现为旨在提高GaN HEMT性能的表轴设计策略提供了宝贵的指导.

关键词:

在中添加了.在 GaN GaN 中.无线电频道的性能表现在UID-GaNN中获取高电子流动性的晶体管.

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