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Updated: May 31, 2025

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14:58

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超级缩放真空门介电MoS2电场效应晶体管的性能评估:避免辐射环境中的氧化物不稳定性

Khalil Tamersit1,2, Abdellah Kouzou3,4, José Rodriguez5

  • 1National School of Nanoscience and Nanotechnology, Abdelhafid Ihaddaden Scientific and Technological Hub, Sidi Abdellah, Algiers 16000, Algeria.

Micromachines
|January 25, 2025
PubMed
概括

使用真空门介电材料 (VGD) 的超级缩放过渡金属二二烯化物场效应晶体管 (FET) 在恶劣环境中显示出增强的性能和稳定性. 这种真空门介电方法为辐射硬化纳米电子提供了一个有希望的解决方案.

关键词:
现在的比率比率是当前比率.现场效应晶体管 (FET) 的使用非平衡的绿色函数 (NEGF)氧化物不稳定性的氧化物.在下值波动 (SS) 时.切换的切换 切换的切换过渡金属二甲基化物 (TMD) 是一种真空门介电器 (VGD) 是一个

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