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为使用PN多轴层的3.3kVSiC电源设备设计带电平衡边缘终结结构

Sangyeob Kim¹, Ogyun Seok²

¹Department of Semiconductor System Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea.

|January 25, 2025

概括

我们开发了先进的碳化 (SiC) 二极管,使用一种新的环辅助连接终端延伸 (TRA-JTE). 这种设计实现了超过4.2kV的故障电压,超过了可靠的高功率应用的现有方法.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

碳化 (SiC) PiN二极管对于高功率电子产品至关重要.
边缘终端结构对于实现高断电压至关重要.
现有的交叉点终端延伸 (JTE) 设计面临着电场拥挤的挑战.

研究的目的:

为SiC PiN二极管展示了一种新的沟环辅助连接终端延伸 (TRA-JTE).
分析TRA-JTE设计参数对阻塞能力的影响.
为了比较TRA-JTE与其他JTE结构的性能.

主要方法:

制造3.3kV的SiC PiN二极管,其中包括TRA-JTE与PN多表轴层.
利用多个P+环和宽度调节的沟来控制有效电荷 (Qeff).
研究了沟数 (Ntrench) 和深度 (Dtrench) 对设备性能的影响.
与单区JTE (SZ-JTE),环辅助JTE (RA-JTE) 和沟JTE (T-JTE) 进行了比较分析.

主要成果:

在TRA-JTE结构中,故障电压 (BV) 超过4.2kV.
与RA-JTE和T-JTE相比,获得了对JTE兴奋剂度 (NJTE) 的变化更高的耐受性.
在TRA-JTE的设计有效地减轻了电场拥挤的交叉路口边缘.
高效的孔注入和导电性调制是通过相同的P型表轴层实现的.

结论:

开发的TRA-JTE为SiC PiN二极管提供了强大而高性能的边缘终结解决方案.
这种先进的终止技术显著提高了高功率设备的故障电压和可靠性.
TRA-JTE为下一代SiC功率半导体开发提供了一个有前途的方法.

关键词:

P型的表轴生长 P型的表轴生长一个PiN二极管.边缘终端的终结交叉点终结延伸 (JTE) 是指交叉点终结延伸.碳化 (SiC) 是一种碳化.沟环辅助-JTE (TRA-JTE) 的一个例子.

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