通过晶体管启用的分割输入电压水平转换器用于超低功率应用
Chakali Chandrasekhar1, Mohammed Mahaboob Basha2, Sari Mohan Das3
1Department of ECE, Sri Venkateswara College of Engineering, Tirupati 517507, AP, India.
Micromachines
|January 25, 2025
概括
一个新的通过晶体管启用分割输入电压水平转换器 (PVLS) 在集成电路中提供了能源效率和速度. 这种低功率的设计实现了广泛的电压转换,面积和延迟最小.
科学领域:
- 集成电路 (IC) 设计设计
- 低功率电子产品 低功率电子产品
- 半导体设备物理 半导体设备物理
背景情况:
- 在现代集成电路 (IC) 中,低于值电压的管理对于能源效率和速度至关重要.
- 电平转换器 (LS) 对于信号完整性和IC多个电压域的可靠运行至关重要.
研究的目的:
- 为面积,延迟和功率高效的应用设计一个通过晶体管启用的分割输入电压水平转换器 (PVLS).
- 为了实现广泛的电压转换范围,增强信号完整性和可靠运行.
主要方法:
- 拟议的PVLS集成了拉升和拉降网络,用于升级/下降班次.
- 整合多门CMOS技术和负载平衡驱动分割逆变器,以最大限度地减少静电和泄漏功率.
- 使用55nmCMOS技术实现的设计.
主要成果:
- 该PVLS表现出高效的低功耗运行,动态功耗为2.00nW.
- 从0.3V到1.3V实现了广泛的电压转换范围.
- 它的最小面积为7.66μm2,在1MHz时的传播延迟为90ps.
结论:
- 在PVLS提供了显著的进步在低功耗,高性能水平转移ICs.
- 该设计为需要广泛的电压转换的节能应用提供了最佳解决方案.
- 最小的面积和低功耗使其适用于先进的集成电路设计.
更多相关视频
10:50Design and Use of a Low Cost, Automated Morbidostat for Adaptive Evolution of Bacteria Under Antibiotic Drug Selection
Published on: September 27, 2016
9.7K
08:25Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver
Published on: August 27, 2021
2.5K
相关概念视频
Voltage Dividers
475
In electrical circuits, resistors can be connected in series, sequentially linked one after the other. In a series configuration, the same current flows through each resistor. Ohm's law is a fundamental principle to understand the behavior of resistors in series. It expresses the voltage across these resistors in terms of the current and resistance.
Kirchhoff's voltage law implies that the sum of the voltages across the resistors in series equals the source voltage. This means that the...
Kirchhoff's voltage law implies that the sum of the voltages across the resistors in series equals the source voltage. This means that the...
475
Bipolar Junction Transistor
511
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
511
Voltage Doubler Circuit
454
A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
454
MOSFET: Enhancement Mode
277
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
277
MOSFET Amplifiers
146
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
146
Biasing of FET
212
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
212
