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一个X-Band Class-J GaN MMIC功率放大器,具有经过精心设计的带内输出功率平度
Bangjie Zheng1, Zhiqun Cheng1,2, Zhiwei Zhang1,3
1School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.
Micromachines
|January 25, 2025
概括
本研究介绍了一种X波段高功率化 (GaN) MMIC功率放大器 (PA). 它通过负载线理论和先进的匹配网络实现了极好的带内功率平坦性和高效率.
科学领域:
- 电气工程 电气工程
- 固态电子 固态电子
- 微波工程 微波工程
背景情况:
- 化 (GaN) 单立式微波集成电路 (MMIC) 对于高功率应用至关重要.
- 在功率放大器 (PA) 中同时实现高效率,输出功率和功率平坦性仍然是一个设计挑战.
研究的目的:
- 设计和验证一个X频段高功率GaN MMIC功率放大器 (PA).
- 通过负载线理论和优化匹配网络,提高带内功率平坦度和效率.
主要方法:
- 负载线理论被应用于分析扩展连续类B/J (CCBJ) 阻抗空间中的功率变化趋势.
- 一个L-C阻抗匹配网络的设计是为了使输出阻抗与CCBJ空间内的特定恒定功率轮相匹配.
- 为了增强最大化和稳定性,RC平行结构被纳入了阶段间匹配网络.
主要成果:
- 该GaN MMIC PA实现了47-47.6dBm的和输出功率.
- 在带内功率波动被最小化到±0.3dB.
- 放大器的功率增益为27.0-27.8dB,在X频段的效率为40-45.5%.
结论:
- 拟议的CCBJ设计方法,结合优化的L-C和RC匹配网络,有效地提高了X频段GaN MMIC PAs的带内功率平坦性和整体性能.
- 开发的PA满足了对高功率X频段应用的苛刻规格,展示了所采用的设计方法的有效性.
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