商用1.7kV SiC MOSFETs在变化电压下的短路性能分析
Shahid Makhdoom1, Na Ren1,2, Ce Wang1
1College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China.
Micromachines
|January 25, 2025
概括
与1.2kV设备相比,1.7kV碳化物 (SiC) MOSFET显示出优越的短路强度. 这些高压SiC MOSFET超出了行业标准,为下一代电力系统提供了更高的可靠性.
科学领域:
- 电力电子 电力电子 电力电子
- 半导体设备 半导体设备
- 材料科学 材料科学 材料科学
背景情况:
- 碳化物 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 对于高功率应用至关重要.
- 在实际条件下,1.2 kV SiC MOSFET 往往无法满足行业标准的短路承受时间 (SCWT).
- 关于高压SiC MOSFET的短路性能存在有限的数据.
研究的目的:
- 为了全面评估商业上可用的1.7kV SiC MOSFETs的短路性能.
- 分析不同电压条件对SCWT的影响.
- 在1.7kV的SiC MOSFET中识别短路事件期间的主导失效机制.
主要方法:
- 在各种排水源电压 (VDS) 条件下对1.7kV的SiC MOSFET进行实验评估.
- 测量短路承受时间 (SCWT).
- 故障分析以确定故障机制.
主要成果:
- 在SCWT和VDS之间存在一个权衡;SCWT从400V的32μs下降到1100V的4μs.
- 在600V (代表实际使用) 时,SCWT为12μs,超过了10μs的行业基准.
- 门介电断裂是VDS≤600V的主要故障模式;热失控发生在更高电压 (800V和1100V) 时.
结论:
- 1.7 kV SiC MOSFET 提供了比 1.2 kV 设备更好的短路稳定性.
- 坚固的门驱动设计和有效的热管理对于可靠的操作至关重要.
- 1.7 kV SiC MOSFET是下一代电力系统中高压应用的可行和高效的解决方案.
相关概念视频
01:17Characteristics of MOSFET
334
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
334
01:22MOSFET: Enhancement Mode
277
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
277
01:21Three-Phase Short Circuit—Unloaded Synchronous Machine
114
Conducting a three-phase short circuit test on an unloaded synchronous machine helps understand its impact on the system. The AC fault current's oscillogram, with the DC offset removed, reveals that the waveform amplitude decreases from an initially high value to a steady-state level for one phase of the machine.
This behavior occurs due to the magnetic flux produced by the short-circuit armature currents. Initially, these currents follow high-reluctance paths but eventually shift to...
This behavior occurs due to the magnetic flux produced by the short-circuit armature currents. Initially, these currents follow high-reluctance paths but eventually shift to...
114
01:20MOSFET: Depletion Mode
311
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
311
01:16MOSFET
414
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
414
01:23Small-Signal Analysis of MOSFET Amplifiers
497
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
497