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Updated: May 31, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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通过选择性区域增长模拟正常关闭的垂直GaN MOSFET,使用新增增强侧墙通道进行模拟

Jiyao Du1,2,3, Taofei Pu4, Xiaobo Li4

  • 1School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China.

Micromachines
|January 25, 2025
PubMed
概括

这项研究引入了一种新的正常关闭化 (GaN) MOSFET,设计具有增强的侧墙通道. 优化p-GaN层和p-GaN屏蔽可显著提高功率电子应用的性能.

关键词:
获得了MOSFET.选择性的增长区域增长.侧墙的道是侧墙道.模拟模拟是指一个模拟模拟.垂直装置是一种垂直的装置.

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