设计和研究一种新的P型无连接FET,用于CMOS逆变器的高性能

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Updated: May 31, 2025

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Bin Wang1, Ziyuan Tang1, Yuxiang Song1

  • 1State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|January 25, 2025
PubMed
概括

使用部分耗尽的在绝缘体技术的新型p型无连接场效应晶体管 (PJLFET) 提供了卓越的性能. 这种先进的晶体管设计实现了高开/关电流比,并降低了值电压,以便在高性能芯片中潜在使用.

关键词:
这是一个CMOS逆变器.这是PD-SOII.埋葬的层层层被埋葬.没有连接的FET.

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