一个基于MOSFET的辐射传感器的SPICE建模,其介电HfO2/SiO2双层
Miloš Marjanović1, Stefan D Ilić2, Sandra Veljković1
1Department of Microelectronics, Faculty of Electronic Engineering, University of Niš, 18000 Niš, Serbia.
Sensors (Basel, Switzerland)
|January 25, 2025
概括
这项研究详细介绍了一种新的SPICE模型,用于RADFET辐射传感器,使用氧化/二氧化双层介电器. 该模型准确地预测了不同辐射剂量下的传感器性能,这对于辐射检测应用至关重要.
科学领域:
- 材料科学与工程 材料科学与工程
- 半导体设备物理 半导体设备物理
背景情况:
- 传统的RADFET (电阻接入的场效应晶体管) 使用二氧化,限制了小型化.
- 像氧化这样的高k介电物使现代辐射传感器中的更薄的门氧化物成为可能.
- 优化RADFET是准确辐射剂量测量的关键.
研究的目的:
- 为使用HfO2/SiO2双层介电体的RADFET传感器开发和验证一个SPICE模型.
- 提取关键的电气参数和剂量依赖的模型参数.
- 为辐射传感器应用提供可靠的模拟工具.
主要方法:
- 使用HfO2/SiO2介电层制造RADFET传感器.
- 实验测量电气特性和对电离辐射的反应.
- 根据实验数据提取SPICE模型参数 (值电压,传导率).
- 对实验结果进行SPICE模型的校准和验证.
主要成果:
- 成功提取两个介电厚度的SPICE模型参数: (30/10) nm和 (40/5) nm.
- 对于各自的介电结构,传感器的确定灵敏度为1.685mV/Gy和0.78mV/Gy.
- 拟议的SPICE模型与实验数据达到了很好的一致,最高可达20 Gy.
结论:
- 开发的SPICE模型准确地表示了使用HfO2/SiO2介电剂的RADFET的行为.
- 该模型已被验证用于高达20 Gy的辐射剂量计应用.
- 这项工作有助于设计和模拟先进的辐射传感器.
相关概念视频
01:16MOSFET
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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01:23Small-Signal Analysis of MOSFET Amplifiers
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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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01:22MOSFET: Enhancement Mode
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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01:17MOSFET Amplifiers
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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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01:17Characteristics of MOSFET
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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01:22Biasing of FET
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