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Updated: May 31, 2025

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使用双门偏差触发的第三象限特征对载SiC MOSFET的无传感器连接点温度估计

Yansong Lu1, Yijun Ding1, Jia Li1

  • 1School of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.

Sensors (Basel, Switzerland)
|January 25, 2025
PubMed
概括

本研究提出了一种具有成本效益,无传感器的方法,用于监测电动汽车中的碳化 (SiC) MOSFET温度. 该技术使用现有的硬件和双门偏差来准确估计结点温度,提高热安全.

关键词:
身体二极管是什么?电动汽车 (EV) 是一种电动汽车.金属氧化物半导体场效应晶体管 (MOSFETs) 的使用碳化 (SiC) 是一种碳化.温度监测 温度监测 温度监测第三象限 (3rd-quad) 的特征

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