Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Crystal Field Theory - Octahedral Complexes02:58

Crystal Field Theory - Octahedral Complexes

26.1K
Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
26.1K
Band Theory02:35

Band Theory

14.9K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
14.9K
Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

41.3K
Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
41.3K
Energy Bands in Solids01:01

Energy Bands in Solids

687
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
687
Metallic Solids02:37

Metallic Solids

18.2K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
18.2K

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Fingerprints of Preformed Pairs in Two-Electron Angle-Resolved Photoemission Spectroscopy.

Physical review letters·2026
Same author

Deep Reconstruction of Ni(OH)<sub>2</sub> via Magnetic-Field Regulation of Fe(OH)<sub>3</sub> Colloids for Efficient Oxygen Evolution Reaction.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Giant Magnetization Modulation of Fe in Fe/Li<sub>3</sub>PO<sub>4</sub> Heterostructures by Space Charge.

ACS applied materials & interfaces·2026
Same author

Pomeranchuk instability from electronic correlations in CsTi<sub>3</sub>Bi<sub>5</sub> kagome metal.

Nature communications·2025
Same author

Field-Free, Deterministic Giant Spin-Orbit Torque Switching of 1.3 T Perpendicular Magnetization With Symmetry-Lifted Topological Surface States.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

Hund's flat band in a frustrated spinel oxide.

Proceedings of the National Academy of Sciences of the United States of America·2025

相关实验视频

Updated: May 30, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.1K

通过间层几何挫折在间隔过渡中的平面带生成金属二基因化物.

Yawen Peng1, Ren He1, Peng Li1

  • 1Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L3G1, Canada.

Small (Weinheim an der Bergstrasse, Germany)
|January 27, 2025
PubMed
概括

研究人员在过渡金属二甲基化物 (TMD) 材料中使用稀释间引入平面带. 这为探索量子相创造了一个新的平台,通过使用角度分辨光辐射光谱学 (ARPES) 观测Mn$_{1/4}$TaS$_{2}$的平面波段.

关键词:
阿尔佩斯 (ARPES) 是一个名为阿尔佩斯的游戏.DFT计算的计算方法平带宽带的广播频道.紧密结合的模型.过渡金属二甲基二甲基化物

更多相关视频

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.4K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K

相关实验视频

Last Updated: May 30, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.1K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.4K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K

科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 材料科学 材料科学 材料科学
  • 量子力学就是量子力学.

背景情况:

  • 平电子带增强了电子相关性,并使丰富的多体量子相成为可能.
  • 实现平面带通常涉及挫败的格子或Moiré超级格子.

研究的目的:

  • 开发一种通用方法,用于将平面带引入过渡金属二甲基化物 (TMD) 材料.
  • 为了研究交联TMD的特性和潜在应用.

主要方法:

  • 过渡金属二甲基化物 (TMD) 材料的稀释间隔.
  • 角度分辨率光辐射光谱学 (ARPES) 用于观察电子带结构.
  • 偏振依赖的ARPES和对称性分析以确定轨道特征.
  • 超级细胞紧密结合模拟以建模带状形成.

主要成果:

  • 观测一个平面带在瞬间空间中消失的分散在间隔的Mn$_{1/4}$TaS$_{2}$.
  • 通过偏振依赖的ARPES识别平面带的轨道特征.
  • 理论上证实了这样的平面带在各种TMD和间隔配置中是可以实现的.

结论:

  • 稀释间隔提供了一种多功能途径,用于在TMD中设计平面带.
  • 这项工作为探索由强大的电子相关性驱动的新兴量子现象建立了一个新的材料平台.
  • 这些发现为基于平带物理学的新型量子相和设备铺平了道路.