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Updated: Apr 11, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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阶段边缘缺陷对半导体过渡金属二甲基因化电催化剂的电子结构产生纳米级影响

Kenneth Ortiz Chua1, Megan N Jackson1

  • 1Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States.

Journal of the American Chemical Society
|January 28, 2025
PubMed
概括

鉴定异质催化中的活性位点是关键. 对于二化物 (MoTe2),其半导体阶段的边缘点通过改变电子结构显著增加了催化活性,而不是其半金属阶段.

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