研究DF-TSOM方法用于检测光学元件的地下缺陷

相关实验视频

Updated: Aug 4, 2026

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages
08:46

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Published on: April 13, 2016

10.0K

Na Wang, Weihu Zhou, Xiaojiao Song

    Optics express
    |January 29, 2025
    PubMed
    概括

    一种新的暗场透焦扫描光学显微镜 (DF-TSOM) 技术有效地检测100纳米级地下表面缺陷. 这种先进的方法显著提高了透明材料的对比度和灵敏度.

    更多相关视频

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    13.7K
    Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography11:34

    Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography

    Published on: May 15, 2017

    11.1K

    相关概念视频

    Total Internal Reflection Fluorescence Microscopy01:05

    Total Internal Reflection Fluorescence Microscopy

    Total internal reflection fluorescence microscopy or TIRF is an advanced microscopic technique used to visualize fluorophores in samples close to a solid surface with a higher refractive index, such as a glass coverslip. TIRF only allows fluorophores in proximity to the solid surface to be excited. When light from a medium with a lower refractive index (such as air) hits the glass coverslip at a critical angle, the light undergoes total internal reflection stead of passing through the glass.