半分析模型用于在上单体集成的电注入GaAs纳米基层激光二极管

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Updated: May 12, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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Andualem Ali Yimam, Davide Colucci, Charles Caer

    Optics express
    |January 29, 2025
    PubMed
    概括

    一个新的半分析模型解释了电注入的纳米激光器,揭示了模式击是它们运行的关键. 该模型有助于研究影响激光性能的设备参数.

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