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Updated: May 30, 2025

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精确操作测量AlGaN/GaN HEMT通道温度和优化热设计

Ruihua An¹, Jinyan Zhao¹, Shijie Zhai¹

¹The State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, The Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.

|January 29, 2025

概括

使用拉曼光谱学准确地绘制化 (GaN) 功率设备的温度图,有助于优化结构. 这项研究改善了散热,使钻石基板的峰值通道温度降低了70°C.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
物理物理学物理

背景情况:

基于化 (GaN) 的动力设备,特别是高电子流动性晶体管 (HEMT) 的自热显著限制了性能增强.
准确的温度分布估计和设备结构优化对于减轻这种自我加热效应至关重要.

研究的目的:

使用拉曼光谱对AlGaN/GaN HEMT进行高空间分辨率的操作温度测量.
探索设备热设计的优化,以改善散热.
为了研究基板材料对设备热性能的影响.

主要方法:

操作拉曼光谱仪用于高空间分辨率的温度测量.
在单指HEMT中横向和深度温度分布的表征.
二维电热模拟以确定热点位置.
对于多指的HEMT,进行三维有限元分析.
理论优化多指器件结构 (门宽度,斜率,布局,基板,厚度).

主要成果:

使用电热模拟,在排水侧附近的门边下确定了热点位置.
多指HEMT的实验结果与3D有限元素分析模拟进行了对齐.
优化设备结构,包括基板材料,导致了显著的热改善.
用单晶钻石基板替换碳化降低了70°C的峰值通道温度.

结论:

拉曼光谱是一种有效的工具,用于精确,高分辨率的GaN HEMT的温度映射.
设备结构优化,特别是基板选择,对于有效的热管理至关重要.
这些发现为提高GaN HEMT电源设备的热设计和性能提供了宝贵的见解.

关键词:

在AlGaN/GaN HEMTs中使用.频道温度频道温度频道温度具有自我加热的效果.热模拟的热模拟

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