在铁电调制的 SrFeO 记忆电阻器中,挥发性电阻切换和短期突触可塑性
Wenjie Hu1, Zhen Fan1, Linyuan Mo1
1Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
ACS applied materials & interfaces
|January 30, 2025
概括
本研究介绍了一种使用SrFeO (SFO) 进行挥发性电阻切换的新型铁电记忆电阻器. 该设备有效模拟短期突触可塑性,这对于神经形态计算应用至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 神经科学是一个神经科学.
背景情况:
- 铁 (SrFeO,SFO) 在隔热棕色米勒 (BM-SFO) 和导电矿 (PV-SFO) 阶段之间呈现相变.
- 现有的SFO记忆器通常是非挥发性,限制了它们用于短期突触可塑性 (STP) 的使用.
研究的目的:
- 开发一种可模拟短期突触可塑性 (STP) 的挥发性memristor,使用铁电极化.
- 调查使用铁电极化在基于SFO的设备中破裂导电丝.
主要方法:
- 使用Au/SrRuO3电极制造的铁电Pb(Zr0.2Ti0.8) O3 (PZT) /BM-SFO双层薄膜.
- 挥发性电阻切换行为的特征及其对铁电极化的依赖.
- 展示与STP相关的突触功能,包括刺激后突触电流和配对脉冲促进.
主要成果:
- 该PZT/SFO装置表现出挥发性的电阻切换,低电阻状态随着时间的推移而衰减.
- 挥发性切换归因于氧离子迁移,由PZT/SFO接口上的正极化电荷驱动.
- 该设备成功模拟了各种STP功能,并展示了储计算的潜力.
结论:
- 铁电极化可以诱导基于SFO的memristors中的挥发性电阻切换.
- 这种方法可以实现神经形态应用的短期突触可塑性.
- 拟议的方法为开发超越SFO系统的先进记忆器件提供了一条途径.
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