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Updated: May 30, 2025

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增强ZnO薄膜晶体管的高能质子辐射硬度,具有被动化层

Yongsu Lee1, Hae-Won Lee2, Su Jin Kim1

  • 1Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.

Nano convergence
|January 30, 2025
PubMed
概括

金属氧化物薄膜晶体管 (TFT) 在太空环境中显示出更好的辐射硬度. 氧化TFT的氧化被动化通过防止化学反应提高了对高能质子的稳定性.

关键词:
消极化是一种被动化.通过质子辐射辐射.辐射硬化 辐射硬化薄膜半导体的半导体ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO ZnO

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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