实验性调查和模拟SEM图像强度行为,通过FIB-SEM开发厚度控制的S/TEM叶片制剂
Jun Uzuhashi1,2, Yuanzhao Yao2, Tadakatsu Ohkubo1
1National Institute for Materials Science, Tsukuba, 305-0047, Japan.
Microscopy (Oxford, England)
|January 31, 2025
概括
回散电子的强度可靠地表明了聚焦离子束 (FIB) 稀释期间的叶片厚度,用于扫描传输电子显微镜 (S/TEM). 这一发现可以精确控制叶片厚度,提高S/TEM分析质量和可重复性.
科学领域:
- 材料科学 材料科学 材料科学
- 分析化学 分析化学
- 物理 物理学 物理
背景情况:
- 高品质的薄片对先进的扫描传输电子显微镜 (S/TEM) 分析至关重要.
- 聚焦离子束 (FIB) 研磨是一种准备S/TEM片的标准技术.
- 精确控制叶片厚度和理解FIB引起的损伤是关键的挑战.
研究的目的:
- 为了研究电子强度 (回散电子 - BSEs和二次电子 - SEs) 和叶片厚度之间的关系.
- 为了确定BSE和SE强度的可靠性,作为不同材料的薄膜厚度指标.
- 探索在FIB叶片制备过程中实时控制厚度的潜力.
主要方法:
- 对半导体 (Si),绝缘体 (Al2O3) 和金属 (不钢) 板块的BSE和SE强度的实验研究.
- 模拟分析电子强度依赖于叶片厚度的模拟.
- 电子强度与测量的叶片厚度之间的相关性分析.
主要成果:
- 对于在特定值以下的所有测试材料,BSE强度与叶片厚度呈现线性相关性.
- SE强度显示出一种复杂的,非线性关系与叶片厚度,根据材料和探测器设置而有所不同.
- 据证明,BSE强度是一个一致且可靠的片厚度指标.
结论:
- 在FIB稀释过程中,BSE强度是一种可靠的指标,可以准确,实时地确定FIB稀释期间的叶片厚度.
- 由于材料和探测器的可变性,SE强度不是层层厚度的可靠指标.
- 这些发现有助于改善对叶片制备的控制,提高S/TEM分析的质量和可重复性.
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