(V-TENG) 线

Mukul Biswas1, Didhiti Bhattacharya2, Rahul Mondal2

  • 1Department of Condensed Matter and Materials Physics, S.N. Bose National Centre for Basic Sciences, JD Block, Sector III, Salt Lake, Kolkata, 700106, India.

概括

这项研究增强了 triboelectric nanogenerators (TENGs) 用于通过工程表面和添加过渡层来收集能量. 经过修改的TENG显示了更好的电压,电流和功率密度,为电子设备提供动力并无线传输数据.

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