相关实验视频

Updated: Apr 30, 2026

Cooling Rate Dependent Ellipsometry Measurements to Determine the Dynamics of Thin Glassy Films
09:32

Cooling Rate Dependent Ellipsometry Measurements to Determine the Dynamics of Thin Glassy Films

Published on: January 26, 2016

8.1K

用太赫兹时域圆测量对载体密度和移动性的晶圆尺度映射

Verdad C Agulto, Toshiyuki Iwamoto, Zixi Zhao

    Optics letters
    |January 31, 2025
    PubMed
    概括

    太赫兹时域圆测量 (THz-TDE) 现在使半导体晶片的大规模定量映射成为可能. 这种非破坏性方法准确地描述了材料如碳化 (SiC) 中的导电性和载体密度等电气性能.

    更多相关视频

    Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity11:30

    Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

    Published on: March 6, 2017

    11.6K
    Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method07:38

    Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

    Published on: April 18, 2019

    30.2K

    相关概念视频

    Carrier Transport01:21

    Carrier Transport

    The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
    Drift Current:
    The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
    1.2K