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外在的伪容量CoOOH通过抑制其由S2-doping触发的相位过渡来实现

Lizhuo Qi¹, Jing Li¹, Yuanyuan Liu¹

¹School of Chemistry and Chemical Engineering, Yantai University, Yantai, 264000, China.

Small (Weinheim an der Bergstrasse, Germany)

|February 3, 2025

概括

硫化将电池类型的氧化转化为外部伪容量材料,通过抑制相位过渡. 这种新型材料的电化学性能与内在的伪容量材料相美.

科学领域:

材料科学材料科学材料科学
电化学电化学电化学
储能储能储能储能储能储能

背景情况:

电池类型的材料可以通过抑制相位过渡来表现出伪电容性行为.
外在的伪容量材料是内在材料的宝贵补充,但由于机制不清楚,研究是有限的.
了解相变抑制和电化学机制对于开发新的伪容量材料至关重要.

研究的目的:

通过S2-doping从电池类型的材料 (Co(OH) 中创建一个外在的伪容量材料.
阐明相位过渡抑制机制和与之相关的电化学机制在S^2-化Co(OH) ₂中.
评估开发的外部伪电容材料及其设备的电化学性能.

主要方法:

电池类型Co (OH) 2的S2-doping,以创建外部的伪容量材料.
电化学测量以研究间歇/脱间歇行为和相位过渡.
在离子间隔/脱间隔过程中对结构变化的分析.

主要成果:

在S^2-中,Co(OH)_{2的注抑制了K⁺的间歇,阻止了向CoOOH.的相位过渡.}
兴奋剂物质促进H⁺间隙/间隙,保持P3结构,并使外部伪容量行为成为可能.
由此产生的外在伪电容材料和组装设备表现出与内在伪电容材料相当的电化学性能.

结论:

这种S^2- 兴奋剂策略有效地将电池类型的Co(OH) ₂转化为外在的伪容量材料.
这项研究阐明了抑制相位过渡的机制以及H⁺间隙在实现外在伪容量的作用.
这项工作扩大了伪容量材料的范围,并为高性能储能设备提供了新的途径.

关键词:

库 (CooooH) 是一个古老的语言.S2 - 兴奋剂的使用.外在的伪容量材料是外在的伪容量材料.超级电容器的超级电容器是什么抑制相位过渡的抑制.

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